Integrated circuit memory device having delayed write capability

ABSTRACT

An integrated circuit memory device has a first set of pins to receive, using a clock signal, a row address followed by a column address. The device has a second set of pins to receive, using the clock signal, a sense command and a write command. The sense command specifies that the device activate a row of memory cells identified by the row address. The write command specifies that the memory device receive write data and store the write data at a location, identified by the column address, in the row of memory cells. The write command is posted internally to the memory device after a first delay has transpired from a first time period in which the write command is received at the second set of pins. The write data is received at a third set of pins after a second delay has transpired from the first time period.

This application is a continuation of U.S. patent application Ser. No.11/059,216, filed Feb. 15, 2005, now U.S. Pat. No. 7,197,611, which is acontinuation of U.S. patent application Ser. No. 10/128,167, filed Apr.22, 2002, now U.S. Pat. No. 6,868,474, which is a divisional of U.S.patent application Ser. No. 09/169,206, filed Oct. 9, 1998, now U.S.Pat. No. 6,401,167, which claims priority to U.S. Provisional PatentApplication No. 60/061,770, filed Oct. 10, 1997, all of which are hereinincorporated by referenced in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to electronic systems for datastorage and retrieval. More particularly, the invention is directedtoward improved methods and structures for memory devices.

2. Description of the Related Art

In any engineered design there are compromises between cost andperformance. The present invention introduces novel methods andstructures for reducing the cost of memory devices while minimallycompromising their performance. The description of the inventionrequires a significant amount of background including: applicationrequirements, memory device physical construction, and memory devicelogical operation.

Memory device application requirements can be most easily understoodwith respect to memory device operation. FIG. 1 shows the generalorganization of a memory device. Memory device 101 consists of a core102 and an interface 103. The core is responsible for storage of theinformation. The interface is responsible for translating the externalsignaling used by the interconnect 105 to the internal signaling carriedon bus 104. The primitive operations of the core include at least a readoperation. Generally, there are other operations required to manage thestate of the core 102. For example, a conventional dynamic random accessmemory (DRAM) has at least write, precharge, and sense operations inaddition to the read operation.

For purposes of illustrating the invention a conventional DRAM core willbe described. FIG. 2 is a block diagram of a conventional DRAM core 102.Since the structure and operation of a conventional DRAM core is wellknown in the art only a brief overview is presented here.

A conventional DRAM core 202 mainly comprises storage banks 211 and 221,row decoder and control circuitry 210, and column data path circuitcomprising column amplifiers 260 and column decoder and controlcircuitry 230. Each of the storage banks comprises storage arrays 213and 223 and sense amplifiers 212 and 222.

There may be many banks, rather than just the two illustrated.Physically the row and column decoders may be replicated in order toform the logical decoder shown in FIG. 2. The column i/o lines 245 maybe either bidirectional, as shown, or unidirectional, in which caseseparate column i/o lines are provided for read and write operations.

The operation of a conventional DRAM core is divided between row andcolumn operations. Row operations control the storage array word lines241 and the sense amplifiers via line 242. These operations control themovement of data from the selected row of the selected storage array tothe selected sense amplifier via the bit lines 251 and 252. Columnoperations control the movement of data from the selected senseamplifiers to and from the external data connections 204 d and 204 e.

Device selection is generally accomplished by one of the followingchoices:

-   -   matching an externally presented device address against an        internally stored device address;    -   requiring separate operation control lines, such as RAS and CAS,        for each set of memory devices that are to be operated in        parallel; and    -   providing at least one chip select control on the memory device.

FIG. 3 illustrates the timing required to perform the row operations ofprecharge and sense. In their abstract form these operations can bedefined as

-   -   precharge(device, bank)—prepare the selected bank of the        selected device for sensing; and    -   sense(device, bank, row)—sense the selected row of the selected        bank of the selected device.

The operations and device selection arguments are presented to the corevia the PRECH and SENSE timing signals while the remaining arguments arepresented as signals which have setup and hold relationships to thetiming signals. Specifically, as shown in FIGS. 2-4, PRECH and PRECHBANKform signals on line 204 a in which PRECHBANK presents the “bank”argument of the precharge operation, while SENSE, SENSEBANK and SENSEROWform signals on line 204 b in which SENSEBANK and SENSEROW present the“bank” and “row” arguments, respectively, for the sense operation. Eachof the key primary row timing parameters, t_(RP), t_(RAS,min), andt_(RCD) can have significant variations between devices using the samedesign and across different designs using the same architecture.

FIG. 5 and FIG. 6 illustrate the timing requirements of the read andwrite operations, respectively. These operations can be definedabstractly as:

-   -   data=read (device, bank, column)—transfer the data in the subset        of the sense amplifiers specified by “column” in the selected        “bank” of the selected “device” to the READDATA lines; and    -   write (device, bank, column, mask, data)—store the data        presented on the WRITEDATA lines into the subset of the sense        amplifiers specified by “column” in the selected “bank” of the        selected “device”; optionally store only a portion of the        information as specified by “mask”.

More recent conventional DRAM cores allow a certain amount of concurrentoperation between the functional blocks of the core. For example, it ispossible to independently operate the precharge and sense operations orto operate the column path simultaneously with row operations. To takeadvantage of this concurrency each of the following groups may operatesomewhat independently:

-   -   PRECH and PRECHBANK on lines 204 a;    -   SENSE, SENSEBANK, and SENSEROW on lines 204 b;    -   COLCYC 204 f on line, COLLAT and COLADDR on lines 204 g, WRITE        and WMASK one lines 204 c, READDATA on line 204 d, and WRITEDATA        on line 204.

There are some restrictions on this independence. For example, as shownin FIG. 3, operations on the same bank observe the timing restrictionsof t_(RP) and t_(RAS,min). If accesses are to different banks, then therestrictions of FIG. 4 for t_(SS) and t_(PP) may have to be observed.

The present invention, while not limited by such values, has beenoptimized to typical values as shown in Table 1.

TABLE 1 Typical Core Timing Values Symbol Value (ns) t_(RP) 20t_(RAS,Min) 50 t_(RCD) 20 t_(PP) 20 t_(SS) 20 t_(PC) 10 t_(DAC) 7

FIG. 7 shows the permissible sequence of operations for a single bank ofa conventional DRAM core. It shows the precharge 720, sense 721, read722, and write 723, operations as nodes in a graph. Each directed arcbetween operations indicates an operation which may follow. For example,arc 701 indicates that a precharge operation may follow a readoperation.

The series of memory operations needed to satisfy any applicationrequest can be covered by the nominal and transitional operationsequences described in Table 2 and Table 3. These sequences arecharacterized by the initial and final bank states as shown in FIG. 8.

The sequence of memory operations is relatively limited. In particular,there is a universal sequence:

-   -   precharge,    -   sense,    -   transfer (read or write), and    -   close.

In this sequence, close is an alternative timing of precharge but isotherwise functionally identical. This universal sequence allows anysequence of operations needed by an application to be performed in onepass through it without repeating any step in that sequence. A controlmechanism that implements the universal sequence can be said to beconflict free. A conflict free control mechanism permits a newapplication reference to be started for every minimum data transfer.That is, the control mechanism itself will never introduce a resourcerestriction that stalls the memory requestor. There may be other reasonsto stall the memory requester, for example references to different rowsof the same bank may introduce bank contention, but lack of controlresources will not be a reason for stalling the memory requestor

TABLE 2 Nominal Transactions Initial Bank State Final Bank StateTransaction Type Operations Performed closed closed empty sense, seriesof column operations, precharge open open miss precharge, sense, seriesof column operations hit series of column operations

TABLE 3 Transitional Transactions Initial Bank State Final Bank StateTransaction Type Operations Performed closed open empty sense, <seriesof column operations>(optional) open closed miss <precharge, sense,series of column operations>(optional), precharge hit <series of columnoperations> (optional), precharge

Memory applications may be categorized as follows:

-   -   main memory—references generated by a processor, typically with        several levels of caches;    -   graphics—references generated by rendering and display refresh        engines; and    -   unified—combining the reference streams of main memory and        graphics.

Applications may also be categorized by their reference streamcharacteristics. According to the application partition mentioned abovereference streams can be characterized in the following fashion:

-   -   First, main memory traffic can be cached or uncached processor        references. Such traffic is latency sensitive since typically a        processor will stall when it gets a cache miss or for any other        reason needs data fetched from main memory. Addressing        granularity requirements are set by the transfer size of the        processor cache which connects to main memory. A typical value        for the cache transfer size is 32 bytes. Since multiple memory        interfaces may run in parallel it is desirable that the memory        system perform well for transfer sizes smaller than this. Main        memory traffic is generally not masked; that is, the vast bulk        of its references are cache replacements which need not be        written at any finer granularity than the cache transfer size.    -   Another type of reference stream is for graphics memory.        Graphics memory traffic tends to be bandwidth sensitive rather        than latency sensitive. This is true because the two basic        graphics engines, rendering and display refresh, can both be        highly pipelined. Latency is still important since longer        latency requires larger buffers in the controller and causes        other second order problems. The ability to address small quanta        of information is important since typical graphics data        structures are manipulated according to the size of the triangle        being rendered, which can be quite small. If small quanta cannot        be accessed then bandwidth will be wasted transferring        information which is not actually used. Traditional graphics        rendering algorithms benefit substantially from the ability to        mask write data; that is, to merge data sent to the memory with        data already in the memory. Typically this is done at the byte        level, although finer level, e.g. bit level, masking can        sometimes be advantageous.

As stated above, unified applications combine the characteristics ofmain memory and graphics memory traffic. As electronic systems achievehigher and higher levels of integration the ability to handle thesecombined reference streams becomes more and more important.

Although the present invention can be understood in light of theprevious application classification, it will be appreciated by thoseskilled in the art that the invention is not limited to the mentionedapplications and combinations but has far wider application. In additionto the specific performance and functionality characteristics mentionedabove it is generally important to maximize the effective bandwidth ofthe memory system and minimize the service time. Maximizing effectivebandwidth requires achieving a proper balance between control and datatransport bandwidth. The control bandwidth is generally dominated by theaddressing information delivered to the memory device. The service timeis the amount of time required to satisfy a request once it is presentedto the memory system. Latency is the service time of a request when thememory system is otherwise devoid of traffic. Resource conflicts, eitherfor the interconnect between the requester and the memory devices, orfor resources internal to the memory devices such as the banks,generally determine the difference between latency and service time. Itis desirable to minimize average service time, especially for processortraffic.

The previous section introduced the performance aspects of thecost-performance tradeoff that is the subject of the present invention.In this section the cost aspects are discussed. These aspects generallyresult from the physical construction of a memory device, including thepackaging of the device.

FIG. 9 shows the die of a memory device 1601 inside of a package 1620.For typical present day device packages, the bond pads, such as 1610,have center to center spacing significantly less than the pins of thedevice, such as 1640. This requires that there be some fan-in from theexternal pins to the internal bonding pads. As the number of padsincreases the length of the package wiring, such as 1630, grows. Observethat elements 1630 and 1640 are alternately used to designate packagewiring.

There are many negative aspects to the increase in the length of thepackage wiring 1640, including the facts that: the overall size of thepackage increases, which costs more to produce and requires more areaand volume when the package is installed in the next level of thepackaging hierarchy, such as on a printed circuit board. Also, the stubcreated by the longer package wiring can affect the speed of theinterconnect. In addition, mismatch in package wiring lengths due to thefan-in angle can affect the speed of the interconnect due to mismatchedparasitics.

The total number of signal pins has effects throughout the packaginghierarchy. For example, the memory device package requires morematerial, the next level of interconnect, such as a printed circuitboard, requires more area, if connectors are used they will be moreexpensive, and the package and die area of the master device will grow.

In addition to all these cost concerns based on area and volume of thephysical construction another cost concern is power. Each signal pin,especially high speed signal pins, requires additional power to run thetransmitters and receivers in both the memory devices as well as themaster device. Added power translates to added cost since the power issupplied and then dissipated with heat sinks.

The memory device illustrated in FIG. 10 uses techniques typical ofpresent day memory devices. In this device 1701, a single shared commandbus 1710 in conjunction with the single address bus 1720 and mask bus1730 is used to specify all of the primitive operations comprisingprecharge, sense, read, and write in addition to any other overheadoperations such as power management.

FIG. 11 illustrates the operation of the memory device of FIG. 10. Theillustrated reference sequence, when classified according to Table 2 andthe universal sequence previously described comprises:

-   -   write empty—sense 1851, write 1853 with mask 1871, data 1881,        close(precharge) 1861;    -   write miss—precharge 1852, sense 1854, write 1856 with mask        1872, data 1882;    -   read hit—read 1857, tristate control 1873, data 1883; and    -   transitional write miss—precharge 1855, sense 1858, write 1859,        mask 1874, data 1884, close (precharge) 1862.

In FIG. 11 each box represents the amount of time required to transferone bit of information across a pin of the device.

In addition to illustrating a specific type of prior art memory device,FIG. 11 can be used to illustrate a number of techniques for specifyingdata transfers. One prior art technique uses an internal register tospecify the number of data packets transferred for each read or writeoperation. When this register is set to its minimum value and thereference is anything besides a hit then the device has insufficientcontrol bandwidth to specify all the required operations whilesimultaneously keeping the data pins highly utilized. This is shown inFIG. 11 by the gaps between data transfers. For example there is a gapbetween data a, 1881 and data b, 1882. Even if sufficient controlbandwidth were provided some prior art devices would also requiremodifications to their memory cores in order to support high data pinutilization.

The technique of specifying the burst size in a register makes itdifficult to mix transfer sizes unless the burst size is alwaysprogrammed to be the minimum, which then increases control overhead. Theincrease in control overhead may be so substantial as to render theminimum burst size impractical in many system designs.

Regardless of the transfer burst size, the technique of a single unifiedcontrol bus, using various combinations of the command pins 1810,address pins 1820, and mask pins 1830 places limitations on the abilityto schedule the primitive operations. A controller which has referencesin progress that are simultaneously ready to use the control resourcesmust sequentialize them, leading to otherwise unnecessary delay.

Read operations do not require masking information. This leaves the maskpins 1830 available for other functions. Alternately, the mask pinsduring read operations may specify which bytes should actually be drivenacross the pins as illustrated by box 1873.

Another technique is an alternative method of specifying that aprecharge should occur by linking it to a read or write operation. Whenthis is done the address components of the precharge operation need notbe respecified; instead, a single bit can be used to specify that theprecharge should occur. One prior art method of coding this bit is toshare an address bit not otherwise needed during a read or writeoperation. This is illustrated by the “A-Prech” boxes, 1861 and 1862.

FIG. 12 shows a sequence of four read references each comprising all thesteps of the universal sequence. Although the nominal transactions ofTable 2 do not require the multiple precharge steps of the universalsequence it is useful to examine how well a device handles the universalsequence in order to understand its ability to support mixed empty andmiss nominal transactions, as well as the transitional transactions ofTable 3. As can be seen, the data pins are poorly utilized. Thisindicates that control contention will limit the ability of the deviceto transfer data for various mixes of application references. Theutilization of the data pins could be improved by making the burstlength longer. However, the applications, such as graphics applications,require small length transfers rather than large ones.

Another technique makes the delay from write control information to datatransfer different from the delay of read control information to datatransfer. When writes and reads are mixed, this leads to difficulties infully utilizing the data pins.

Thus, current memory devices have inadequate control bandwidth for manyapplication reference sequences. Current memory devices are unable tohandle minimum size transfers. Further, current memory devices utilizethe available control bandwidth in ways that do not support efficientapplications. Current memory devices do not schedule the use of the datapins in an efficient manner. In addition, current memory devicesinefficiently assign a bonding pad for every pin of the device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a known memory structure architecture.

FIG. 2 illustrates a known DRAM core structure.

FIG. 3 illustrates Row Access Timing to a single bank in accordance withthe prior art.

FIG. 4 illustrates Row Access Timing to different banks in accordancewith the prior art.

FIG. 5 illustrates Column Read Timing in accordance with the prior art.

FIG. 6 illustrates Column Write Timing in accordance with the prior art.

FIG. 7 illustrates operation sequences for a conventional core DRAM.

FIG. 8 illustrates initial and final bank states associated with amemory operation in accordance with the prior art.

FIG. 9 illustrates a semiconductor packaging structure utilized inaccordance with the prior art.

FIG. 10 illustrates DRAM interface signals in accordance with the priorart.

FIG. 11 illustrates a command control sequence in accordance with theprior art.

FIG. 12 illustrates a unified control universal read sequence inaccordance with an embodiment of the invention.

FIG. 13 illustrates a unified control universal read sequence with maskprecharge in accordance with an embodiment of the invention.

FIG. 14 illustrates a unified control universal write sequence with maskprecharge in accordance with an embodiment of the invention.

FIG. 15 illustrates a unified control universal read write sequence withmask precharge in accordance with an embodiment of the invention.

FIG. 16 illustrates a column access block diagram with no delayed writein accordance with an embodiment of the invention.

FIG. 17 illustrates timing operations associated with a write command ofan embodiment of the invention.

FIG. 18 illustrates timing operations associated with a read command ofan embodiment of the invention.

FIG. 19 illustrates mixed read and write timing in accordance with anembodiment of the invention.

FIG. 20 illustrates a column access with a delayed write in accordancewith an embodiment of the invention.

FIG. 21 illustrates mixed read and write timing in accordance with anembodiment of the invention.

FIG. 22 illustrates a unified control universal read and write sequencewith mask precharge and delayed write in accordance with the invention.

FIG. 23 illustrates a split control universal read write sequence withmask precharge and delayed write in accordance with an embodiment of theinvention.

FIG. 24 illustrates a cost optimized highly concurrent memory inaccordance with the invention.

FIG. 25 illustrates a control packet format for encoding the senseoperation on the primary control lines in accordance with an embodimentof the invention.

FIG. 26 illustrates a control packet format for encoding the prechargeoperation on the primary control lines in accordance with an embodimentof the invention.

FIG. 27 illustrates a packet format when masking is not used on thesecondary control lines of the invention.

FIG. 28 illustrates a packet format when masking is used on thesecondary control lines of the invention.

FIG. 29 illustrates a data block timing diagram for data packetstransmitted on data wires of the invention.

FIG. 30 illustrates a read hit in accordance with an embodiment of theinvention.

FIG. 31 illustrates an empty read in accordance with an embodiment ofthe invention.

FIG. 32 illustrates a read miss in accordance with an embodiment of theinvention.

FIG. 33 illustrates a write hit in accordance with an embodiment of theinvention.

FIG. 34 illustrates an empty write in accordance with an embodiment ofthe invention.

FIG. 35 illustrates a write miss in accordance with an embodiment of theinvention.

FIG. 36 illustrates reads in accordance with an embodiment of theinvention.

FIG. 37 illustrates empty byte masked writes in accordance with anembodiment of the invention.

FIG. 38 illustrates byte masked write hits in accordance with anembodiment of the invention.

FIG. 39 illustrates byte masked write misses in accordance with anembodiment of the invention.

FIG. 40 illustrates reads or unmasked writes in accordance with anembodiment of the invention.

FIG. 41 illustrates universal byte masked writes in accordance with anembodiment of the invention.

FIG. 42 illustrates reads or unmasked writes in accordance with anembodiment of the invention.

FIG. 43 illustrates reads or masked writes or unmasked writes inaccordance with an embodiment of the invention.

FIG. 44 illustrates reads and unmasked writes in accordance with anembodiment of the invention.

FIG. 45 illustrates transfers using a primary control packet for senseand precharge in accordance with an embodiment of the invention.

FIG. 46 illustrates a memory block constructed in accordance with anembodiment of the invention.

FIG. 47 illustrates DRAM refresh operations utilized in connection withan embodiment of the invention.

FIG. 48 illustrates isolation pins without accompanying pads inaccordance with an embodiment of the invention.

FIG. 49 illustrates the transport of auxiliary information in accordancewith an embodiment of the invention.

FIG. 50 illustrates framing of the CMD for processing by the auxiliarytransport unit in accordance with an embodiment of the invention.

Like reference numerals refer to corresponding parts throughout thedrawings.

DESCRIPTION OF EMBODIMENTS

FIG. 13 shows a timing diagram according to an embodiment of the presentinvention in which the Mask pins 2030 carry a precharge specificationrather than either the write mask information or the tristate controlinformation, as shown in connection with FIG. 12. This use of the Maskpins need not be exclusive. There are multiple ways in which to indicatehow the information presented on the Mask pins is to be used. Forexample:

-   -   in one embodiment according to the present invention, a register        within the device specifies whether the mask pins are to be used        for masking, tristate control, or precharge control;    -   in another embodiment according to the present invention, the        encoding of the command pins is extended to specify, on a per        operation basis, how the mask pins are to be used; and    -   in another embodiment according to the present invention, a        register bit indicates whether tristate control is enabled or        not and, in the case it is not enabled, an encoding of the        command pins indicates if a write is masked or not; in this        embodiment all reads and unmasked writes may use the Mask pins        to specify a precharge operation while masked writes do not have        this capability since the Mask pins are used for mask        information

There are many alternatives for how to code the precharge information onthe mask pins. In one embodiment in which there are two mask pins andthe memory device has two banks, one pin indicates whether an operationshould occur and the other pin indicates which bank to precharge. In analternative embodiment, in which the minimum data transfer requires morethan one cycle, more banks are addressed by using the same pins for morethan one cycle to extend the size of the bank address field.

Using the mask pins to specify a precharge operation and the associatedbank address requires another way of specifying the device argument. Inone embodiment the device is specified in some other operation. Forexample, the precharge specified by the mask pins shares deviceselection with a chip select pin that also conditions the main commandpins. In another embodiment, additional control bandwidth is added tothe device. For example, an additional chip select pin is added for soleuse by the recoded mask pin precharge. In yet another example of usingadditional control bandwidth in which the minimum data transfer requiresmore than one cycle, the device address is coded on the additional bits,the device address being compared to an internal device addressregister.

In FIG. 13 it can be seen that the data pins are better utilized. Forexample, the offset between data block 1982 and 1983 in FIG. 12 isreduced from 4 units of time to the 2 units of time between data blocks2082 and 2083 of FIG. 13. This is accomplished because the prechargespecification has been moved from the primary command pins, 2010, to themask pins 2030 so there is more time available on the command pins tospecify the sense and read or write operations.

Delaying Write Data

FIG. 14 shows the timing of the universal write sequence in anembodiment according to the present invention, when the Mask pins areused for the precharge step. The offset from data block 2182 to datablock 2183 is two units of time just as in the read sequence shown inFIG. 13. However, the offset from the use of the command pins to the useof the data pins is shown as zero for the write case but three for theread case. As can be seen in FIG. 15, when these sequences are combinedto produce a sequence that has both reads and writes, there is asubstantial gap between the write data and the read data as can be seenby the delay between data 2282 and data 2283. Delaying the write data sothat the offset from control information to data is the same,independent of whether the transfer is a read or a write, reduces oreliminates the delay.

FIG. 16 shows the column access path of a memory device in an embodimentof the invention that does not delay write data with respect to readdata. In FIG. 16, the delay from external control 2304 to internalcolumn control 2306 is identical whether the access is a read or awrite. As can be seen from FIG. 5 and FIG. 6, this means that theexternal data interconnect 2305 provides the data to the core prior tothe write, while the external data interconnect is used after the coreprovides data for a read. In summary, a read uses resources in theorder: (a) control interconnect 2304, (b) column i/o 2307, (c) datainterconnect 2305. A write uses them in the order: (a) controlinterconnect 2304, (b) data interconnect 2305, (c) column i/o 2307.

This change in resource ordering gives rise to resource conflictproblems that produce data bubbles when mixing reads and writes. Theresource ordering of writes generally leads to the resource timing shownin FIG. 17. For example, a write uses resource as shown by block 2440,the data resource as shown by block 2450, and the column resource asshown by the block 2460. This resource timing minimizes the controllogic and the latency of writing data into the memory core.

The read resource timing of FIG. 18, illustrates a minimum latency readvia block 2540, column i/o block 2560, and data block 2550. When thesetimings are combined as shown in FIG. 19, a data bubble is introducedbetween blocks 2652 and 2653 of FIG. 19. This data bubble constitutestime during which the data pins are not being utilized to transfer data;the pins are inactive. Forcing the data pins to do nothing as a resultof mixing reads and writes is a problem.

Note that the data bubble appears regardless of whether the write 2642and the read 2643 are directed to the same or different memory deviceson the channel. Further note that the delay from the control resource tothe column i/o resource is identical for reads and writes. In view ofthis, it is impossible for the data resource timing to be identical forreads and writes.

Matching the timing of the write-use of the data resource to theread-use of the data resource avoids the problem stated above. Since theuse of the data pins in a system environment has an intrinsic turnaroundtime for the external interconnect, the optimal delay for a write doesnot quite match the delay for a read. Instead, it should be the minimumread delay minus the minimum turnaround time. Since the turnaround delaygrows as the read delay grows, there is no need to change the writecontrol to data delay as a function of the memory device position on thechannel.

FIG. 20 shows an embodiment of the invention having delayed writecircuitry. The column access control information on line 2706 is delayedfor writes relative to when the column control information is presentedto the core for reads. FIG. 20 shows multiplexor 2712 which selectsbetween the write delay block 2709 and the normal column control outputof the interface. The interface controls the multiplexor depending uponwhether the transfer is a read or a write. However, there are manyembodiments of this mechanism. For example, a state machine couldintroduce new delaying state transitions when the transfer is a write.

FIG. 21 shows the operation of delaying the write to match the read inaccordance with the present invention. In this figure, the delay fromwrite control block 2842 to write data block 2852 is set to match thedelay from read control 2843 block to read data 2853 block less thechannel turnaround time. As long as different column data paths are usedto perform the read column cycle and the write column cycle, the databubble is reduced to the minimum required by channel turnaroundrequirements and is no longer a function of control or data resourceconflicts.

Since write latency is not an important metric for applicationperformance, as long as the write occurs before the expiration oft_(RAS,MIN) (so that it does not extend the time the row occupies thesense amplifiers, which reduces application performance), thisconfiguration does not cause any loss in application performance, aslong as the writes and reads are directed to separate column data paths.

Delayed writes help optimize data bandwidth efficiency over a set ofbidirectional data pins. One method adds delay between the control andwrite data packets so that the delay between them is the same or similaras that for read operations. Keeping this Apattern≅the same or similarfor reads and writes improves pipeline efficiency over a set ofbidirectional data pins, but at the expense of added complexity in theinterface.

FIG. 22 shows that the offset between write data 2984 block and readdata 2985 block has been reduced by 2 units of time, compared to theanalogous situation of FIG. 15.

Split Control Resources

FIG. 22 shows less than full utilization of the data interconnect due tothe overloaded use of the command pins 2910. The command pins can bepartitioned so that these operations are delivered to the device in anindependent fashion. The timing of such a control method is shown inFIG. 23 where the unified control has been partitioned into fields ofcontrol information, labeled primary field 3011 and secondary field3012. Generally speaking the primary control pins can be used to controlthe sense operation while the secondary control pins control read orwrite operations. An embodiment of the present invention allows fullutilization of the data pins and can transfer minimum size data blocksback-to-back, for any mix of reads or unmasked writes, for any mix ofhits, misses, or empty traffic, to or from any device, any bank, anyrow, and any column address with only bank conflict, channel turnaroundat the write-read boundaries, and 2nd order effects such as refreshlimiting the data channel utilization. With the addition of moreinterconnect resources the writes could be masked or unmasked. Observethat FIG. 23 presumes that the memory device is designed for aninterconnect structure that has zero turnaround delay between writes andreads.

FIG. 24 shows an embodiment of the invention that has separate controlinterconnect resources. In one embodiment it uses delayed writes. Inanother embodiment it can alternately specify either a masking or aprecharge field, either singly or in conjunction with another field. Inanother embodiment it combines delayed writes and the masking versusprecharge. In an alternative embodiment according to the presentinvention there are three methods for starting a precharge operation inthe memory core:

-   -   in the sense operation field on the primary control lines 3104,        as an alternative to the sense information;    -   in the mask field on the secondary control lines, 3105 as an        alternative to the mask information; and    -   according to the device and bank addresses specified in a read        or a write.

The benefit of the present invention according to a specific embodimentis shown in Table 4 and FIG. 25 and FIG. 26. Table 4 shows the specificlogical pinout of the embodiment of FIG. 24 to be used for thisillustrative purpose.

TABLE 4 High Performance Logical Pin Description FIG. 24 Name CountDescription Reference Primary[2:0] 3 Primary request control 3104Secondary[4:0] 5 Secondary request control 3105 DQA[8:0] 9 Low orderdata byte 3106 DQB[8:0] 9 High order data byte

FIG. 25 and FIG. 26 show two alternative control packet formats forencoding, respectively, the sense and precharge operations on theprimary control lines. Table 5 defines the fields in the alternativeformats of the primary control packet. The PD field selects a specificmemory device. A combined field carries both the bank and row addressarguments of the sense operation, as previously defined.

TABLE 5 Primary Control Packet Fields Field Description PD4T Deviceselector bit 4 True; for framing, device selection and broadcasting.PD4F Device selector bit 4 False; for framing, device selection andbroadcasting. PD[3:0] Device selector, least significant bits. AVActivate row; also indicates format of packet. PA[16:0] Address;combining bank and row. PB[5:0] Bank address POP[10:0] Opcode of theprimary control packet.

FIG. 27 and FIG. 28 show two alternative control packet formats forencoding various operations on the secondary control lines. FIG. 27shows the packet format when masking is not being performed while FIG.28 shows the format when masking is being performed. Table 6 defines thefields in either format of the secondary control packet. Packet framingis accomplished via a framing bit. The M field is used to indicate whichformat of the packet is being presented as well as indicating whetherwrite data being written to the core should be masked. The SO fieldindicates whether a read or write operation should be performed. Deviceselection for SO specified operations is accomplished according to theSD field which is compared against an internal register that specifiesthe device address. The SA field encodes the column address of a read orwrite operation. The SB field encodes the bank address of a read orwrite operation. If the SPC field indicates precharge, then theprecharge operation uses the SD device and SB bank address. The SRCfield is used for power management functions. The MA and MB fieldsprovide a byte masking capability when the M field indicates masking.The XO, XD, and XB fields provide the capability to specify a prechargeoperation when the M field does not indicate masking. Note that, unlikethe SPC field, this specification of a precharge has a fully independentdevice, XD, and bank address, XB, that is not related to the read orwrite operations.

FIG. 29 shows the format of the data packet transmitted on the datawires.

TABLE 6 Secondary Control Packet Fields Field Description SD[4:0] Deviceselector for Column Operation SS=1 Start bit; for framing M Mask bit,indicates if mask format is being used SO[1:0] Secondary Operation codeSPC Precharge after possible Column Operation SRC Power managementSA[6:0] Address for Column Operation SB[5:0] Bank for Column OperationMA[7:0] Byte mask for lower order bytes MB[7:0] Byte mask for higherorder bytes XD[4:0] Device selector for Extra Operation XO[4:0] ExtraOperation code XB[5:0] Bank for Extra Operation

The operation of this embodiment can be most easily understood throughvarious timing diagrams as shown in FIG. 30 through FIG. 45. Thesefigures can be divided into several series, each of which depictsdifferent aspects of this embodiment's operation:

-   -   FIG. 30 through FIG. 35 show a basic operation as an embodiment        of the present invention, other operations can be thought of as        compositions of these basic operations;    -   FIG. 36 through FIG. 39 show compositions of the basic        operations but distinct from notions of the universal sequence;    -   FIG. 40 through FIG. 43 show operations according to the        universal sequence, these figures demonstrate the ability of the        embodiment to handle mixed read and write with mixed hit, miss,        and empty traffic without control resource conflicts; and    -   FIG. 44 through FIG. 45 show operations according to the        universal sequence demonstrating less control conflicts than the        prior art. Other control scheduling algorithms are possible        which seek to minimize other metrics, such as service time, with        or without compromising effective bandwidth.

The nominal timings for the examples are shown in Table 7.

TABLE 7 Nominal Timings Symbol Value (ns) t_(RP) 20 t_(RAS,min) 60t_(RCD) 20 t_(CAC) 20A description of each of the timing diagrams follows.

FIG. 30 shows a timing diagram for a nominal read hit. Recall that anominal hit reference means that the beginning and final state of theaddressed bank is open and that the appropriate row is already in thesense amplifiers of the addressed bank. In this case no row operation isrequired. The secondary control packet specifies the read operation,device address, bank address, and column address. Some time later, theread data is driven on the data pins. In an embodiment according to thepresent invention it as a constant time, later fixed by the design ofthe memory device.

FIG. 31 shows a timing diagram for a nominal read empty. Recall that anominal empty reference means that the beginning and final state of theaddressed bank is closed. In order to transfer data, the addressed bankis first sensed, and then, after t_(RCD), the read operation takes placejust as for the read hit of FIG. 30. Note that this particular exampleshows the precharge occurring using the primary control packet prechargemechanism. Alternately, other precharge mechanisms are used, since thereare no other references contending for the control resources.

FIG. 32 shows a timing diagram for a nominal read miss. Recall that anominal miss reference means that the beginning and final state of theaddressed bank is open, but that the row currently sensed in the bank isnot the one addressed by the application reference. In this case, aprecharge operation occurs, followed by a sense operation, and finally aread operation that causes the proper data to be driven out on the datapins. Any precharge mechanisms can be used.

FIG. 33 shows a nominal write hit. The figure relates to a multistepwrite operation. Thus, there is a secondary control packet in order toget the transported data sent all the way into the memory core. Thissecond secondary control packet provides a timing reference thatindicates to the memory device that it is time to send the data to thecore.

FIG. 34 shows a timing diagram for a nominal write empty. A write emptyoperation is a combination of the actions needed for a read empty and awrite hit. First, a sense operation is performed, followed by a writeoperation, including the secondary control packet, followed by someprecharge operation, although a primary precharge operation is shown.

FIG. 35 illustrates a timing diagram for a nominal write miss. Writemiss operation is a combination of the actions needed for a read missand a write hit. First, a precharge operation is invoked; a primaryprecharge operation is shown. A sense operation follows, along with thetwo secondary control packets needed to write the data all the way tothe memory core.

The previous figures show how various application references can bedecomposed into the memory operations. FIG. 36 illustrates how one ofthese isolated references can be used for a sequence of memoryreferences. In FIG. 36 a sequence of nominal read empty references isshown. In this case the XO precharge operation is used to perform theclose operation at the end of the sequence. The present invention thusprovides another precharge mechanism that neither overloads the externalcontrol pin resources, nor adds logic to the memory device.

FIG. 37 shows timing for a series of nominal masked write emptyreferences. In this case, the XO precharge operation is not availablebecause those control pin resources are being used to supply the maskinformation. Instead, the SPC field is used in order to avoid bubbles,since the primary control pins are already committed to the series ofsense operations. Presuming that the delay between sense and writeoperations is such that write read conflict problems are being avoided,as shown with the previous discussion on delayed writes, there is noreal penalty for using the SPC field. This is different from reads,which would normally complete, and which desire to complete, sooner.This asymmetry between reads and writes leads to the cost reductions ofthe present invention by reducing required control bandwidth, whileminimally impacting application performance.

FIG. 38 shows a series of nominal masked write hit references. Note thatalthough two secondary control packets were required to fully write datainto the memory core for an isolated reference the average number neededis about one.

FIG. 39 shows a timing diagram for a series of masked writes misses. Inthis example the SPC field is used to precharge the bank. Such asequence is useful in a graphics application which varies the length oftime it keeps any bank open depending upon the amount of rendering to bedone. If more than one transfer is directed to the same row of the samebank of the same device then some of the SPC precharge operations andthe corresponding sense operations can be removed. This is useful bothto eliminate unnecessary (precharge, sense) power but also to reduce theeffective number of independent banks required to sustain the effectivebandwidth, even when bank conflicts might occur.

FIG. 40 shows a timing diagram for the universal sequence for minimumsize transfers when the write traffic is not masked. In this case the XOprecharge operation can be consistently used for the precharge operationwhich begins the universal sequence, while the SPC field is used for theclose operation which ends the universal sequence. As can be seen, oncethe first reference has completed its sequence every reference behind itcontinues without any delays due to control resource constraints. Theonly delays are due to external interconnect turnaround delays. Theprocessor cache miss traffic typically does not contain frequent maskedwrite activity but is latency sensitive. Since it does not use themasking capability it can use the XO precharge capability.

FIG. 41 demonstrates the extra degree of freedom permitted when thetransfer size per (sense, precharge) pair is twice the minimum transfersize. In this case some of the primary control bandwidth becomesavailable for precharge control. In this case the universal sequence canbe implemented even for masked writes.

FIG. 42 shows a timing diagram for the universal sequence for reads andunmasked writes when the transfer size is twice the minimum per(precharge, sense) pair. In this case the precharge step of theuniversal sequence is scheduled with the primary packet precharge whilethe close step is scheduled with the XO precharge. In this case not onlyis there adequate control bandwidth but there is more scheduling freedomfor each of the steps of the universal sequence compared to the minimumtransfer size per (precharge, sense) pair case.

FIG. 43 shows a timing diagram for universal reads or masked writes orunmasked writes. In this case the precharge step of the universalsequence is still scheduled in the primary control packet but the closestep is scheduled with the XO precharge operation. This reduces thescheduling flexibility compared to the unmasked case 24 but stillpermits full data pin utilization.

The previous figures demonstrate the conditions in which the universalsequence can be scheduled. The ability to schedule the universalsequence guarantees that there will not be any control conflicts whichreduce available data transfer bandwidth. However, none of the nominalreference sequences actually requires two precharges to be scheduled. Sothere is generally adequate control bandwidth for various mixes of missand empty traffic as shown in FIG. 44.

FIG. 45 shows a timing diagram for another scheduling alternative whenthe transfer size is twice the minimum per (precharge, sense) pair andthe traffic consists of all empty references. In this case both thesense and precharge can be scheduled on the primary control pins.

FIG. 46 shows an alternative embodiment that includes all of thefeatures of FIG. 24, but includes additional capability to initialize,read and write registers, and supply power control information to thememory device. The pinout of this embodiment is summarized in Table 8.

TABLE 8 Alternative High Performance Logical Pin Description Name CountType Description FIG. 46 Reference CTM 2 RSL Transmit Clock 5301 CTMN(Clock To Master) CFM 2 RSL Receive Clock CFMN (Clock From Master)Primary[2:0] 3 RSL Primary request control 5305 Secondary[4:0] 5 RSLSecondary request control 5305 DQA[8:0] 9 RSL Low order data byte 5307DQB[8:0] 9 RSL High order data byte SIO[1:0] 2 CMOS Bidirectional serialin/out for 5302 and 5304 device initialization, register ops, power modecontrol, and device reset. Used to form the SIO daisy chain. SCK 1 CMOSSerial clock for SIO and CMD 5303 pins. CMD 1 CMOS Command input usedfor 5302 power mode control, configuring SIO daisy chain, and framingSIO operations.

FIG. 47 shows the operation sequence for the alternative embodiment ofFIG. 46. The refresh specific operations support a novel method ofhandling core refresh. These new core operations create the requirementsfor the Refresh and RefreshS operations coded in the primary controlpacket as shown in FIG. 46. In addition, various power controloperations are added to the primary control packet.

FIG. 48 shows an embodiment of the physical construction in which notall of the pins of the memory device are connected to the bond pads ofthe die. These non-connected pins provide signal isolation andshielding, thus avoiding the expense of additional bond pads. Forexample, pin and internal conductor 5542 provides isolation for pin andinternal conductors 5541 and 5543. In one embodiment the non-connectedpins are signal returns, such as ground, which are adjacent to theconnected pins.

According to an embodiment of the present invention the memory device ofFIG. 46 has Auxiliary information 5302 transported in time according toFIG. 49. Auxiliary information 5302 includes a field to specify anauxiliary operation, a control register address in the memory device,and data to be read or written from or to the control register. AuxClockis the AuxClock signal to the Auxiliary Transport Unit 5308 and is usedto receive information from the auxiliary connections 5302 in FIG. 46.Since Auxiliary Transport Unit 5308 operates to reset or initialize thememory device, the unit need only operate slowly. Accordingly,information is framed by the CMD signal, which can be a portion of theauxiliary connections 5302, and received on the AuxIn signal as a serialbit stream. The format of the bit stream is shown in the tables below.As can be noted from Table 9 there are sixteen clock cycles during whicha packet of information is received or obtained from the AuxiliaryTransport Unit. The Aux information fields are the SOP[3:0] field andthe SDEV[4:0] field for the SRQ packet. The SA packet has fieldSA[11:0], the SINT packet has a field of all zeros and the SD packet hasSD[15:0]. In this embodiment of the present invention, the SRQ, SA, SINTand SD packets are received or obtained from the Auxiliary Transportunit in the order listed, unless only the SRQ packet is needed, in whichcase the other packets are not sent. The functions of each of the fieldsin the packets is tabulated in Table 10.

TABLE 9 Control Register Packet Formats AuxClock SRQ packet SA packetSINT SD 0 rsrv rsrv 0 SD15 1 rsrv rsrv 0 SD14 2 rsrv rsrv 0 SD13 3 rsrvrsrv 0 SD12 4 rsrv SA11 0 SD11 5 rsrv SA10 0 SD10 6 SOP3 SA9 0 SD9 7SOP2 SA8 0 SD8 8 SOP1 SA7 0 SD7 9 SOP0 SA6 0 SD6 10 SBC SA5 0 SD5 11SDEV4 SA4 0 SD4 12 SDEV3 SA3 0 SD3 13 SDEV2 SA2 0 SD2 14 SDEV1 SA1 0 SD115 SDEV0 SA0 0 SD0

TABLE 10 Field Description for Control Register Packets FieldDescription rsrv Reserved SOP3 . . . SOP0 Serial opcode. Specifiescommand for control register transaction. 0000 - SRD. Serial read ofcontrol register {SA11 . . . SA0} of memory device {SDEV4 . . . SDEV0}.0001 - SWR. Serial write of control register {SA11 . . . SA0} of memorydevice {SDEV4 . . . SDEV0}. 0010 - SETR. Set Reset bit, all controlregisters assume their reset values. 0011 - CLRR. Clear Reset bit, allcontrol registers retain their reset values. 0100 - SETF. Set fast(normal) clock mode for the clock circuitry SDEV4 . . . SDEV0 Serialdevice field. SBC Serial broadcast. When set, memory device ignores{SDEV4 . . . SDEV0} serial device field SA11 . . . SA0 Serial address.Selects which control register of the selected memory device is read orwritten. SD15 . . . SD0 Serial data. The 16 bits of data written to orread from the selected control register of the selected memory device.

As is shown in Table 10, the memory device is selected by the SDEV fieldand the SOP field determines the Auxiliary Operation to be performed bythe Register Operation Unit 5309 in FIG. 46. The Auxiliary TransportUnit also supports the initialization of the memory device because theAuxiliary Transport Unit itself does not require initialization. Thisfunction is shown in FIG. 49. In this diagram the CMD signal received bythe Auxiliary Transport Unit has different framing information toindicate that an initialization packet follows. This causes all of thememory devices which are connected together on the same externalconnections in FIG. 46 to break apart a daisy chain connection formedfrom AuxIn through AuxOut to AuxIn of the next memory device in thechain as the initialization packet passes through the daisy chain. Next,the first memory device in the chain receives a device identificationfield from the Auxiliary Transport unit into one of its controlregisters. This field serves to identify the device for future AuxiliaryTransport Operations. After the memory device has its control registersconfigured properly, the device field register is written again tochange a bit, causing the first device in the chain to pass theAuxiliary information it receives to the next device in the chain. Thesequence is repeated until all of the memory devices have their controlregisters properly configured and each device has an uniqueidentification.

According to an embodiment of the present invention the memory device ofFIG. 46 receives power control information, specifying a change in thepower mode of the memory device. While power control operations such asPowerdown and Nap are encoded into the precharge packets in oneembodiment according to the present invention, other power controloperations, such as ExitToNormal and ExitToDrowsy come in through theAuxiliary Transport Unit because the other units in FIG. 46 are notoperational due to their reduced power state and because the AuxiliaryTransport Unit operates relatively slowly compared to, for example, theTransfer Units, and so does not require much power while the other unitsare in their reduced power state. These Exit operations may be performedaccording to FIG. 50. FIG. 50 shows a different framing by the CMDsignal so that the Auxiliary Transport Unit can recognize theExitToNormal or ExitToDrowsy request. According to the timing diagram,when a memory device receives a CMD signal 01 with 0 on the falling edgeof AuxClock and 1 on the rising edge of AuxClock, the memory device willexit either the power down state or the nap state (Power State A in thetiming diagram) and move to a new power state (Power State B in thediagram), depending on the state of the AuxIn Signal Line. If the AuxInline is a 1, the memory device will exit to the normal state and if theAuxIn line is a 0 the memory device will exit to the drowsy state. Inother embodiments, the meaning of the AuxIn bits is reversed. The devicethat is targeted for the ExitToNormal or ExitToDrowsy operation isreceived by the Auxiliary Transport Unit 5308 on the data input fieldvia path 5307 of the memory device in FIG. 46.

In an alternate embodiment, each memory device receives a different CMDsignal, one for each device, rather than using the data input field viapath 5307 to identify the device for a ExitToNormal or ExitToDrowsyoperation.

The foregoing description, for purposes of explanation, used specificnomenclature to provide a thorough understanding of the invention.However, it will be apparent to one skilled in the art that the specificdetails are not required in order to practice the invention. In otherinstances, well known circuits and devices are shown in block diagramform in order to avoid unnecessary distraction from the underlyinginvention. Thus, the foregoing descriptions of specific embodiments ofthe present invention are presented for purposes of illustration anddescription. They are not intended to be exhaustive or to limit theinvention to the precise forms disclosed, obviously many modificationsand variations are possible in view of the above teachings. Theembodiments were chosen and described in order to best explain theprinciples of the invention and its practical applications, to therebyenable others skilled in the art to best utilize the invention andvarious embodiments with various modifications as are suited to theparticular use contemplated. It is intended that the scope of theinvention be defined by the following claims and their equivalents.

1. An integrated circuit memory device comprising: a memory coreincluding a plurality of memory cells; a first set of pins to receive,using a clock signal, a row address, followed by a column address; asecond set of pins to receive, using the clock signal: a sense command,the sense command to specify that the memory device activate a row ofmemory cells of the plurality of memory cells identified by the rowaddress, and a write command during a first time period, the writecommand to specify that the memory device receive write data and storethe write data at a location in the row of memory cells, the locationidentified by the column address, wherein the write command is postedinternally to the memory device after a first delay has transpired fromthe first time period; and a third set of pins to receive the write dataafter a second delay has transpired from the first time period.
 2. Theintegrated circuit memory device of claim 1, further comprising a pin toreceive the clock signal, wherein the third set of pins receives twoconsecutive bits of the write data for every pin of the third set ofpins during a clock cycle of the clock signal.
 3. The integrated circuitmemory device of claim 1, wherein the third set of pins outputs readdata in response to a read command received at the second set of pins,wherein the read data is output after a third delay from the first timeperiod.
 4. The integrated circuit memory device of claim 3, wherein thesecond delay corresponds to the third delay minus a turnaround time onthe third set of pins.
 5. The integrated circuit memory device of claim3, wherein the third set of pins outputs two consecutive bits of theread data for every pin of the third set of pins during a clock cycle ofthe clock signal.
 6. The integrated circuit memory device of claim 1,wherein the third set of pins outputs read data in response to a readcommand received by the second set of pins, and wherein, for every pinof the third set of pins, at least two bits of the read data are outputduring a clock cycle of the clock signal.
 7. The integrated circuitmemory device of claim 1, further comprising a plurality of senseamplifiers to store the write data to the memory core, and wherein theplurality of memory cells are dynamic memory cells.
 8. The integratedcircuit memory device of claim 7, wherein the second set of pinsincludes at least one pin to receive precharge information thatspecifies whether to precharge the plurality of sense amplifiers afterthe write data is stored in the memory core.
 9. The integrated circuitmemory device of claim 1, further comprising: a circuit to cause afourth delay, after the write command is received at the second set ofpins, when issuing control information internally to the memory core ofthe memory device in response to the write command.
 10. The integratedcircuit memory device of claim 9, wherein the third set of pins outputsread data in response to a read command received at the second set ofpins, the device further comprising: a multiplexer coupled to the memorycore and the circuit, the multiplexer circuit to provide a path tobypass the circuit when issuing control information in response to theread command received at the second set of pins.
 11. An integratedcircuit memory device comprising: a memory core including a plurality ofmemory cells; a command interface to receive, using a clock signal, anactivate command, a row address, a first bank address associated withthe activate command, a write command, a column address, and a secondbank address associated with the write command, wherein: the activatecommand specifies that the memory device activate a row of memory cellsidentified by the row address, located in a bank of the memory cellsidentified by the first bank address, and the write command specifiesthat the memory device receive write data to be stored to a location inthe row of memory cells in a bank identified by the second bank address,wherein the location is identified by the column address; a datainterface to receive the write data after a first delay has transpiredfrom when the write command is received at the command interface; and acircuit to cause a second delay, after the write command is received atthe command interface, when issuing control information internally tothe integrated circuit memory device in response to the write command.12. The integrated circuit memory device of claim 11, wherein thecommand interface includes a set of pins to receive the activate commandand the write command, wherein the activate command is included in afirst packet and the write command is included in a second packet. 13.The integrated circuit memory device of claim 12, wherein the datainterface includes a set of pins to receive two consecutive bits of thewrite data for every pin of the set of pins during a clock cycle of theclock signal.
 14. The integrated circuit memory device of claim 13,wherein the set of pins provide read data output in response to a readcommand received at the command interface, wherein, for every pin of theset of pins, two bits of the read data are output during a clock cycleof the clock signal.
 15. The integrated circuit memory device of claim11, wherein the command interface includes a set of pins to receive theactivate command, the write command and a read command, the devicefurther comprising: a multiplexer coupled to the memory core and thecircuit, the multiplexer circuit to provide a path to bypass the circuitwhen the control information is issued in response to the read command.16. The integrated circuit memory device of claim 11, furthercomprising: a plurality of sense amplifiers to store the write data tothe memory core, wherein the plurality of memory cells are dynamicmemory cells.
 17. The integrated circuit memory device of claim 16,wherein the command interface includes at least one pin to receiveprecharge information that specifies whether to precharge the pluralityof sense amplifiers after the write data is stored in the memory core.18. The integrated circuit memory device of claim 11, wherein the firstbank address is the same as the second bank address.
 19. A method ofoperation of an integrated circuit memory device that includes a memorycore having a plurality of memory cells: receiving, using a clocksignal, a row address, followed by a column address at a first set ofpins; receiving, using the clock signal, a sense command at a second setof pins, wherein the sense command specifies that the memory deviceactivate a row of memory cells of the plurality of memory cellsidentified by the row address; receiving, using the clock signal, awrite command at the second set of pins, wherein the write commandspecifies that the memory device receive write data and store the writedata at a column of the row of memory cells, the column identified bythe column address; presenting the write command internally after afirst delay has transpired from receiving the write command; andreceiving at a third set of pins, after a second delay has transpiredfrom receiving the write command, two consecutive bits of write data forevery pin of the third set of pins, during a clock cycle of the clocksignal.
 20. The method of claim 19, further comprising: receiving a readcommand at the second set of pins; in response to the read command,outputting read data after a third delay from when the read command isreceived, wherein the second delay is based on the third delay.
 21. Themethod of claim 20, wherein the second delay corresponds to the thirddelay minus a turnaround time on the third set of pins.
 22. A method ofoperation of an integrated circuit memory device having a memory coreincluding a plurality of memory cells, the method comprising: receiving,using a clock signal, a row address that identifies a row of memorycells of the plurality of memory cells; receiving, using the clocksignal, a first bank address that identifies a bank of the memory corethat contains the row; receiving, using the clock signal, a columnaddress that identifies a location in the row of memory cells;receiving, using the clock signal, a second bank address that identifiesa bank of the memory core that contains the location; receiving, usingthe clock signal, a sense command and a write command, wherein: thesense command specifies that the memory device activate the rowidentified by the row address and the first bank address, and the writecommand specifies that the memory device receive write data and storethe write data to the location identified by the column address and thesecond bank address; and receiving at a first set of pins, after a firstdelay has transpired from receiving the write command, two consecutivebits of the write data for every pin of the first set of pins, during aclock cycle of the clock signal.
 23. The method of claim 22, furthercomprising: receiving a read command; in response to the read command,outputting read data after a second delay has transpired from receivingthe read command, wherein the first delay is based on the second delay.24. The method of claim 23, wherein the first delay corresponds to thesecond delay minus a turnaround time on the first set of pins.
 25. Themethod of claim 22, wherein the sense command, the row address and thefirst bank address are included in a first packet, and wherein the writecommand, the column address and the second bank address are included ina second packet.
 26. The method of claim 22, wherein the sense commandand the write command are received at a second set of pins, wherein thesense command is included in a first packet and the write command isincluded in a second packet.
 27. The method of claim 22, wherein thesense command is received at a second set of pins and the write commandis received at a third set of pins, wherein the second set of pins areseparate from the third set of pins.
 28. The method of claim 22, furthercomprising: issuing control information internally to the memory core ofthe memory device, in response to the write command, after a third delaytranspires from receiving the write command.
 29. A method of operatingan integrated circuit memory device that receives a clock signal andincludes a memory core having a plurality of banks, the methodcomprising: providing a sense command to a command interface of thememory device, wherein the sense command specifies that the memorydevice activate a row of memory cells in a bank identified by a firstbank address; providing a row address that identifies the row of memorycells in the bank identified by the first bank address; providing acolumn address that identifies a location within the row of memory cellsin a bank identified by a second bank address; providing a write commandto the command interface of the memory device after providing the sensecommand, wherein the write command specifies that the memory devicereceive write data and store the write data in the location within therow of memory cells, wherein the write command is posted internally tothe memory device after a first delay has transpired from when the writecommand is received at the command interface of the memory device; andproviding to a data interface of the memory device, at least twoconsecutive bits of write data during a clock cycle of the clocksignals, after a second delay has transpired after providing the writecommand.
 30. The method of claim 29, wherein the sense command isincluded in a first control packet and the write command is included ina second control packet.
 31. The method of claim 29, wherein the firstbank address is the same as the second bank address.